This video details the manufacturing process of silicon wafers used in integrated circuit (IC) production. It covers the process from raw materials (silicon ore) to the final polished wafer, ready for IC fabrication. The video emphasizes the stringent purity and defect requirements for these wafers.
Silicon Wafer Specifications: Wafers have precise specifications regarding diameter (e.g., 300mm), thickness (less than 1mm), orientation (100 or 111), resistivity, and impurity levels (parts per billion for metallic impurities). These specifications ensure the wafers' suitability for IC manufacturing.
Silicon Purification: The process begins with metallurgical-grade silicon (MGS), obtained by reducing silicon dioxide (SiO2) with carbon. MGS undergoes fractional distillation to achieve electronic-grade silicon (EGS) with extremely low impurity levels.
Single Crystal Growth: Two main methods for growing single crystals are discussed: the Czochralski (CZ) method, dominant for large wafers, and the Float Zone (FZ) method, better for low oxygen content but limited to smaller wafers. Both techniques involve a seed crystal to determine the orientation of the final crystal.
Wafer Processing: The single crystal ingot undergoes several steps: removing seed and tang ends, surface grinding, creating orientation flats (primary and secondary), slicing into wafers, chemical etching, and chemical-mechanical polishing (CMP). These operations refine the wafer to meet the required specifications.
Wafer Inspection: Final inspection involves checking for surface contamination and defects and measuring resistivity to ensure the wafers are ready for IC fabrication.
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